Hikavyy, A. Y. : rechercher sur Z-Library

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1

[IEEE 2020 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2020.6.16-2020.6.19)] 2020 IEEE Symposium on VLSI Technology - First Monolithic Integration of 3D Complementary FET (CFET) on 300mm Wafers

Subramanian, S., Hosseini, M., Chiarella, T., Sarkar, S., Schuddinck, P., Chan, B.T., Radisic, D., Mannaert, G., Hikavyy, A., Rosseel, E., Sebaai, F., Peter, A., Hopf, T., Morin, P., Wang, S., Devrien

Année:

2020

Fichier:

PDF, 1.12 MB

2020

2

[IEEE 2016 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2016.6.14-2016.6.16)] 2016 IEEE Symposium on VLSI Technology - Ultralow-resistivity CMOS contact scheme with pre-contact amorphization plus Ti (germano-)silicidation

Yu, H., Schaekers, M., Hikavyy, A., Rosseel, E., Peter, A., Hollar, K., Khaja, F. A., Aderhold, W., Date, L., Mayur, A. J., Lee, J.-G., Shin, K. M., Douhard, B., Chew, S. A., Demuynck, S., Kubicek, S.

Année:

2016

Langue:

english

Fichier:

PDF, 673 KB

english, 2016

3

[IEEE Tutorial (ICICDT) - Grenoble, France (2008.06.2-2008.06.4)] 2008 IEEE International Conference on Integrated Circuit Design and Technology and Tutorial - Low-voltage 6T FinFET SRAM cell with high SNM using HfSiON/TiN gate stack, fin widths down to 10nm and 30nm gate length

Collaert, N., von Arnim, K., Rooyackers, R., Vandeweyer, T., Mercha, A., Parvais, B., Witters, L., Nackaerts, A., Altamirano Sanchez, E., Demand, M., Hikavyy, A., Demuynck, S., Devriendt, K., Bauer, F

Année:

2008

Langue:

english

Fichier:

PDF, 475 KB

english, 2008

4

Investigation of hydrogenated CVD diamond films by photo-thermal ionization spectroscopy

Hikavyy, A., Clauws, P., Deferme, W., Bogdan, G., Haenen, K., Nesladek, M.

Journal:

Diamond and Related Materials

Année:

2006

Langue:

english

Fichier:

PDF, 256 KB

english, 2006

5

[IEEE 2010 18th International Conference on Advanced Thermal Processing of Semiconductors (RTP) - Gainesville, FL, USA (2010.09.28-2010.10.1)] 2010 18th International Conference on Advanced Thermal Processing of Semiconductors (RTP) - Impact of laser anneal thermal budget on the quality of thin SiGe channels with a high Ge content

Rosseel, Erik, Hikavyy, Andriy, Everaert, Jean-Luc, Witters, Liesbeth, Mitard, Jerome, Hoffmann, Thomas, Vandervorst, Wilfried, Pap, A., Pavelka, T.

Année:

2010

Langue:

english

Fichier:

PDF, 928 KB

english, 2010

6

[IEEE 2012 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2012.12.10-2012.12.13)] 2012 International Electron Devices Meeting - Phosphorus doped SiC Source Drain and SiGe channel for scaled bulk FinFETs

Togo, M., Lee, J. W., Pantisano, L., Chiarella, T., Ritzenthaler, R., Krom, R., Hikavyy, A., Loo, R., Rosseel, E., Brus, S., Maes, J. W., Machkaoutsan, V., Tolle, J., Eneman, G., Keersgieter, A. D., B

Année:

2012

Langue:

english

Fichier:

PDF, 819 KB

english, 2012

7

Characterization of Epitaxial Si:C:P and Si:P Layers for Source/Drain Formation in Advanced Bulk FinFETs

Rosseel, E., Profijt, H. B., Hikavyy, A. Y., Tolle, J., Kubicek, S., Mannaert, G., L'abbe, C., Wostyn, K., Horiguchi, N., Clarysse, T., Parmentier, B., Dhayalan, S., Bender, H., Maes, J. W., Mehta, S.

Journal:

ECS Transactions

Année:

2014

Langue:

english

Fichier:

PDF, 519 KB

english, 2014

8

(Invited) Gate-All-Around Transistors Based on Vertically Stacked Si Nanowires

Mertens, Hans, Ritzenthaler, Romain, Hikavyy, Andriy Yakovitch, Kim, Min-Soo, Tao, Zheng, Wostyn, Kurt, Schram, Tom, Kunnen, Eddy, Ragnarsson, Lars-Åke, Dekkers, Harold F. W., Hopf, Toby, Devriendt, K

Journal:

ECS Transactions

Année:

2017

Langue:

english

Fichier:

PDF, 676 KB

english, 2017

9

Scalability comparison between raised- and embedded-SiGe source/drain structures for Si 0.55 Ge 0.45 implant free quantum well pFET

Yamaguchi, S., Witters, L., Mitard, J., Eneman, G., Hellings, G., Hikavyy, A., Loo, R., Horiguchi, N.

Journal:

Microelectronics Reliability

Année:

2018

Langue:

english

Fichier:

PDF, 1.01 MB

english, 2018

10

[IEEE 2019 41st Annual EOS/ESD Symposium (EOS/ESD) - Riverside, CA, USA (2019.9.15-2019.9.20)] 2019 41st Annual EOS/ESD Symposium (EOS/ESD) - Transient Overshoot of Sub-10nm Bulk FinFET ESD Diodes with S/D Epitaxy Stressor

Chen, Shih-Hung, Linten, Dimitri, Hellings, Geert, Simicic, Marko, Chiarella, Thomas, Eyben, Pierre, Kubicek, Stefan, Rosseel, Erik, Hikavyy, Andriy, Horiguchi, Naoto

Année:

2019

Langue:

english

Fichier:

PDF, 682 KB

english, 2019

11

Stress analysis of Si1−xGex embedded source/drain junctions

M. Bargallo Gonzalez, E. Simoen, N. Naka, Y. Okuno, G. Eneman, A. Hikavyy, P. Verheyen, R. Loo, C. Claeys, V. Machkaoutsan, P. Tomasini, S.G. Thomas, J.P. Lu, R. Wise

Journal:

Materials Science in Semiconductor Processing

Année:

2008

Langue:

english

Fichier:

PDF, 974 KB

english, 2008

12

The implant-free quantum well field-effect transistor: Harnessing the power of heterostructures

Geert Hellings, Andriy Hikavyy, Jerome Mitard, Liesbeth Witters, Brahim Benbakhti, AliReza Alian, Niamh Waldron, Hugo Bender, Geert Eneman, Raymond Krom, Andreas Schulze, Wilfried Vandervorst, Roger L

Journal:

Thin Solid Films

Année:

2012

Langue:

english

Fichier:

PDF, 1.80 MB

english, 2012

13

Growth of high Ge content SiGe on (110) oriented Si wafers

A. Hikavyy, W. Vanherle, B. Vincent, J. Dekoster, H. Bender, A. Moussa, L. Witters, T. Hoffman, R. Loo

Journal:

Thin Solid Films

Année:

2012

Langue:

english

Fichier:

PDF, 1.28 MB

english, 2012

14

Layout Scaling of pFETs

Eneman, G., Yamaguchi, S., Ortolland, C., Takeoka, S., Kobayashi, M., Witters, L., Hikavyy, A., Mitard, J., Loo, R., Hoffmann, T.

Journal:

IEEE Transactions on Electron Devices

Année:

2011

Langue:

english

Fichier:

PDF, 1.32 MB

english, 2011

15

Analysis of trap-assisted tunneling in vertical Si homo-junction and SiGe hetero-junction Tunnel-FETs

Vandooren, A., Leonelli, D., Rooyackers, R., Hikavyy, A., Devriendt, K., Demand, M., Loo, R., Groeseneken, G., Huyghebaert, C.

Journal:

Solid-State Electronics

Année:

2013

Langue:

english

Fichier:

PDF, 1.16 MB

english, 2013

16

Fabrication and Analysis of a ${\rm Si}/{\rm Si}_{0.55}{\rm Ge}_{0.45}$ Heterojunction Line Tunnel FET

Walke, Amey M., Vandooren, Anne, Rooyackers, Rita, Leonelli, Daniele, Hikavyy, Andriy, Loo, Roger, Verhulst, Anne S., Kao, Kuo-Hsing, Huyghebaert, Cedric, Groeseneken, Guido, Rao, Valipe Ramgopal, Bhu

Journal:

IEEE Transactions on Electron Devices

Année:

2014

Langue:

english

Fichier:

PDF, 1.87 MB

english, 2014

17

Integration aspects of strained Ge pFETs

Witters, L., Eneman, G., Mitard, J., Vincent, B., Hikavyy, A., Milenin, A.P., Mertens, S., Thean, A., Collaert, N.

Journal:

Solid-State Electronics

Année:

2014

Langue:

english

Fichier:

PDF, 1.75 MB

english, 2014

18

Atomic layer deposition of ZnO thin films on boron-doped nanocrystalline diamond

Hikavyy, A., Clauws, P., Vanbesien, K., De Visschere, P., Williams, O.A., Daenen, M., Haenen, K., Butler, J.E., Feygelson, T.

Journal:

Diamond and Related Materials

Année:

2007

Langue:

english

Fichier:

PDF, 455 KB

english, 2007

19

(Invited) Application of Selective Epitaxial Growth in the Sub 20 nm FinFET Device Fabrication

Hikavyy, A. Y., Rosseel, E., Eneman, G., Favia, P., Loo, R.

Journal:

ECS Transactions

Année:

2014

Langue:

english

Fichier:

PDF, 3.57 MB

english, 2014

20

(Invited) Stress Simulations of Si- and Ge-Channel FinFETs for the 14 nm-Node and Beyond

Eneman, G., Brunco, D. P., Witters, L., Vincent, B., Favia, P., Hikavyy, A., De Keersgieter, A., Mitard, J., Loo, R., Veloso, A., Richard, O., Bender, H., Vandervorst, W., Caymax, M., Horiguchi, N., C

Journal:

ECS Transactions

Année:

2013

Langue:

english

Fichier:

PDF, 344 KB

english, 2013

21

Stress Techniques and Mobility Enhancement in FinFET Architectures

Eneman, G., Witters, L., Mitard, J., Hellings, G., De Keersgieter, A., Brunco, D. P., Hikavyy, A., Vincent, B., Simoen, E., Favia, P., Bender, H., Veloso, A., Chiarella, T., Boccardi, G., Kim, M., Tog

Journal:

ECS Transactions

Année:

2013

Langue:

english

Fichier:

PDF, 579 KB

english, 2013

22

[IEEE 2012 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2012.12.10-2012.12.13)] 2012 International Electron Devices Meeting - Standard cell level parasitics assessment in 20nm BPL and 14nm BFF

Schuddinck, P., Badaroglu, M., Stucchi, M., Demuynck, S., Hikavyy, A., Garcia-Bardon, M., Mercha, A., Mallik, A., Chiarella, T., Kubicek, S., Athimulam, R., Collaert, N., Horiguchi, N., Debusschere, I

Année:

2012

Langue:

english

Fichier:

PDF, 4.12 MB

english, 2012

23

[IEEE 2007 15th International Conference on Advanced Thermal Processing of Semiconductors - Cannizzaro, Catania, Italy (2007.10.2-2007.10.5)] 2007 15th International Conference on Advanced Thermal Processing of Semiconductors - Impact of sub-melt laser annealing on Si1-xGex source /drain defectivity

Rosseel, E., Lu, J.P., Hikavyy, A., Verheyen, P., Hoffmann, T., Richard, O., Geypen, J., Bender, H., Loo, R., Absil, P., Intosh, R. Mc, Felch, S. B., Schreutelkamp, R.

Année:

2007

Langue:

english

Fichier:

PDF, 3.13 MB

english, 2007

24

[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - Dual-channel technology with cap-free single metal gate for high performance CMOS in gate-first and gate-last integration

Witters, L., Mitard, J., Veloso, A., Hikavyy, A., Franco, J., Kauerauf, T., Cho, M., Schram, T., Sebai, F., Yamaguchi, S., Takeoka, S., Fukuda, M., Wang, W.-E., Duriez, B., Eneman, G., Loo, R., Kellen

Année:

2011

Langue:

english

Fichier:

PDF, 630 KB

english, 2011

25

TCAD Strain Calibration Versus Nanobeam Diffraction of Source/Drain Stressors for Ge MOSFETs

Buhler, Rudolf Theoderich, Eneman, Geert, Favia, Paola, Witters, Liesbeth Johanna, Vincent, Benjamin, Hikavyy, Andriy, Loo, Roger, Bender, Hugo, Collaert, Nadine, Simoen, Eddy, Martino, Joao Antonio,

Journal:

IEEE Transactions on Electron Devices

Année:

2015

Langue:

english

Fichier:

PDF, 2.01 MB

english, 2015

26

Evaluation of the Si0.8Ge0.2-on-Si Epitaxial Quality by Inline Surface Light Scattering: A Case Study on the Impact of Interfacial Oxygen

Wostyn, K., Kenis, K., Rondas, D., Loo, R., Hikavyy, A. Y., Dhayalan, S., Douhard, B., Mertens, P. W., Holsteyns, F., De Gendt, S., Simpson, G., Bast, G., Swaminathan, K.

Journal:

ECS Transactions

Année:

2014

Langue:

english

Fichier:

PDF, 767 KB

english, 2014

27

High Efficiency Low Temperature Pre-epi Clean Method for Advanced Group IV epi Processing

Machkaoutsan, V., Weeks, K. D., Bauer, M., Maes, J. W., Tolle, J., Thomas, S. G., Alian, A., Hikavyy, A., Loo, R.

Journal:

ECS Transactions

Année:

2013

Langue:

english

Fichier:

PDF, 310 KB

english, 2013

28

[ECS 216th ECS Meeting - Vienna, Austria (October 4 - October 9, 2009)] ECS Transactions - Stress Characterization of Selective Epitaxial Si

Bargallo Gonzalez, Mireia, Fernandez-Lanas, Tatiana, Rosseel, Erik, Hikavyy, Andriy, Dekkers, Harold, Eneman, Geert, Verheyen, Peter, Loo, Roger, Simoen, Eddy R., Claeys, C.

Année:

2009

Langue:

english

Fichier:

PDF, 701 KB

english, 2009

29

[ECS Analytical Techniques for Semiconductor Materials and Process Characterization 5 (ALTECH 2007) - Munich, Germany (September 13 - September 14, 2007)] ECS Transactions - In-Line Characterization of Heterojunction Bipolar Transistor Base Layers by High-Resolution X-Ray Diffraction

Nguyen, Ngoc Duy, Loo, Roger, Hikavyy, Andriy, Van Daele, Benny, Ryan, Paul, Wormington, Matthew, Hopkins, John

Année:

2007

Langue:

english

Fichier:

PDF, 291 KB

english, 2007

30

Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors

Kao, Kuo-Hsing, Verhulst, Anne S., Rooyackers, Rita, Douhard, Bastien, Delmotte, Joris, Bender, Hugo, Richard, Olivier, Vandervorst, Wilfried, Simoen, Eddy, Hikavyy, Andriy, Loo, Roger, Arstila, Kai,

Journal:

Journal of Applied Physics

Année:

2014

Langue:

english

Fichier:

PDF, 2.68 MB

english, 2014

31

[IEEE 2010 18th International Conference on Advanced Thermal Processing of Semiconductors (RTP) - Gainesville, FL, USA (2010.09.28-2010.10.1)] 2010 18th International Conference on Advanced Thermal Processing of Semiconductors (RTP) - Influence of the process sequence and thermal budget on the strain of Si:C stressor layers formed by ion implantation

Rosseel, Erik, Ortolland, Claude, Hikavyy, Andriy, Schram, Tom, Falepin, Annelies, Hoffmann, Thomas, Douhard, Bastien, Moussa, Alain, Vandervorst, Wilfried, Ameen, Mike, Rubin, Leonard

Année:

2010

Langue:

english

Fichier:

PDF, 4.15 MB

english, 2010

32

[IEEE 2015 IEEE International Memory Workshop (IMW) - Monterey, CA, USA (2015.5.17-2015.5.20)] 2015 IEEE International Memory Workshop (IMW) - Integration and Electrical Evaluation of Epitaxially Grown Si and SiGe Channels for Vertical NAND Memory Applications

Capogreco, Elena, Degraeve, Robin, Lisoni, Judit Gloria, Luong, Vu, Arreghini, Antonio, Toledano-Luque, Maria, Hikavyy, Andriy, Numata, Toshinori, De Meyer, Kristin, Van den bosch, Geert, Van Houdt, J

Année:

2015

Langue:

english

Fichier:

PDF, 335 KB

english, 2015

33

[IEEE 2016 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2016.12.3-2016.12.7)] 2016 IEEE International Electron Devices Meeting (IEDM) - Vertically stacked gate-all-around Si nanowire CMOS transistors with dual work function metal gates

Mertens, H., Ritzenthaler, R., Chasin, A., Schram, T., Kunnen, E., Hikavyy, A., Ragnarsson, L.-A., Dekkers, H., Hopf, T., Wostyn, K., Devriendt, K., Chew, S. A., Kim, M. S., Kikuchi, Y., Rosseel, E.,

Année:

2016

Langue:

english

Fichier:

PDF, 759 KB

english, 2016

34

[IEEE 2017 IEEE International Interconnect Technology Conference (IITC) - HsinChu, Taiwan (2017.5.16-2017.5.18)] 2017 IEEE International Interconnect Technology Conference (IITC) - Ultralow resistive wrap around contact to scaled FinFET devices by using ALD-Ti contact metal

Chew, S-A., Yu, H., Schaekers, M., Demuynck, S., Mannaert, G., Kunnen, E., Rosseel, E., Hikavyy, A., Dangol, A., Meyer, K. De, Mocuta, D., Horiguchi, N., Leusink, G., Wajda, C., Hakamata, T., Hasegawa

Année:

2017

Langue:

english

Fichier:

PDF, 535 KB

english, 2017

35

Strained Germanium Gate-All-Around pMOS Device Demonstration Using Selective Wire Release Etch Prior to Replacement Metal Gate Deposition

Witters, L., Arimura, H., Sebaai, F., Hikavyy, A., Milenin, A. P., Loo, R., De Keersgieter, A., Eneman, G., Schram, T., Wostyn, K., Devriendt, K., Schulze, A., Lieten, R., Bilodeau, S., Cooper, E., St

Journal:

IEEE Transactions on Electron Devices

Année:

2017

Langue:

english

Fichier:

PDF, 2.18 MB

english, 2017

36

Low Temperature SiGe Steam Oxide - Aqueous Hf and NH3/NF3 Remote Plasma Etching and its Implementation as Si GAA Inner Spacer

Wostyn, Kurt, Kenis, Karine, Mertens, Hans, Vaisman Chasin, Adrian, Hikavyy, Andriy, Holsteyns, Frank, Horiguchi, Naoto

Journal:

Solid State Phenomena

Année:

2018

Langue:

english

Fichier:

PDF, 571 KB

english, 2018

37

[IEEE 2018 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2018.6.18-2018.6.22)] 2018 IEEE Symposium on VLSI Technology - First demonstration of vertically-stacked Gate-All-Around highly-strained Germanium nanowire p-FETs

Capogreco, E., Witters, L., Arimura, H., Sebaai, F., Porret, C., Hikavyy, A., Loo, R., Milenin, A. P., Eneman, G., Favia, P., Bender, H., Wostyn, K., Litta, E. Dentoni, Schulze, A., Vrancken, C., Opde

Année:

2018

Langue:

english

Fichier:

PDF, 1.89 MB

english, 2018

38

Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D Integration

Porret, C., Hikavyy, A., Granados, J. F. Gomez, Baudot, S., Vohra, A., Kunert, B., Douhard, B., Bogdanowicz, J., Schaekers, M., Kohen, D., Margetis, J., Tolle, J., Lima, L. P. B., Sammak, A., Scappucc

Journal:

ECS Journal of Solid State Science and Technology

Année:

2019

Langue:

english

Fichier:

PDF, 1.03 MB

english, 2019

39

Multi-gate devices for the 32 nm technology node and beyond: Challenges for Selective Epitaxial Growth

N. Collaert, R. Rooyackers, A. Hikavyy, A. Dixit, F. Leys, P. Verheyen, R. Loo, M. Jurczak, S. Biesemans

Journal:

Thin Solid Films

Année:

2008

Langue:

english

Fichier:

PDF, 347 KB

english, 2008

40

pMOS transistor with embedded SiGe: Elastic and plastic relaxation issues

A. Hikavyy, N. Bhouri, R. Loo, P. Verheyen, F. Clemente, J. Hopkins, R. Trussell, M. Caymax

Journal:

Thin Solid Films

Année:

2008

Langue:

english

Fichier:

PDF, 365 KB

english, 2008

41

Low temperature epitaxy and the importance of moisture control

F.E. Leys, A. Hikavyy, V. Machkaoutsan, B. De Vos, L. Geenen, B. Van Daele, R. Loo, M. Caymax

Journal:

Thin Solid Films

Année:

2008

Langue:

english

Fichier:

PDF, 228 KB

english, 2008

42

Atomic layer deposition of ZnS thin films based on diethyl zinc and hydrogen sulfide

Gert Stuyven, Patrick De Visschere, Andriy Hikavyy, Kristiaan Neyts

Journal:

Journal of Crystal Growth

Année:

2002

Langue:

english

Fichier:

PDF, 169 KB

english, 2002

43

PTIS investigation of hydrogenated CVD diamond films

A. Hikavyy, P. Clauws, W. Deferme, G. Bogdan, K. Haenen, M. Nesladek

Journal:

physica status solidi (a)

Année:

2005

Langue:

english

Fichier:

PDF, 243 KB

english, 2005

44

An investigation of structural and electrical properties of boron doped and undoped nanocrystalline diamond films

A. Hikavyy, P. Clauws, J. Maes, V. V. Moshchalkov, J. E. Butler, T. Feygelson, O. A. Williams, M. Daenen, K. Haenen

Journal:

physica status solidi (a)

Année:

2006

Langue:

english

Fichier:

PDF, 325 KB

english, 2006

45

Quantitative depth profiling of SiGe-multilayers with the Atom Probe

Sebastian Koelling, Matthieu Gilbert, Jozefien Goossens, Andriy Hikavyy, Olivier Richard, Wilfried Vandervorst

Journal:

Surface and Interface Analysis

Année:

2011

Langue:

english

Fichier:

PDF, 237 KB

english, 2011

46

Factors Influencing the Leakage Current in Embedded SiGe Source/Drain Junctions

Simoen, E., Gonzalez, M.B., Vissouvanadin, B., Chowdhury, M.K., Verheyen, P., Hikavyy, A., Bender, H., Loo, R., Claeys, C., Machkaoutsan, V., Tomasini, P., Thomas, S., Lu, J.P., Weijtmans, J.W., Wise,

Journal:

IEEE Transactions on Electron Devices

Année:

2008

Langue:

english

Fichier:

PDF, 266 KB

english, 2008

47

High depth resolution analysis of Si/SiGe multilayers with the atom probe

Koelling, Sebastian, Gilbert, Matthieu, Goossens, Jozefien, Hikavyy, Andriy, Richard, Olivier, Vandervorst, Wilfried

Journal:

Applied Physics Letters

Année:

2009

Langue:

english

Fichier:

PDF, 761 KB

english, 2009

48

Stress Analysis and Junction Leakage of Sub-Melt Laser Annealed SiGe Epitaxial Layers

Gonzalez, M.B., Rosseel, E., Hikavyy, A., Fernandez-Lanas, T., Eneman, G., Verheyen, P., Loo, R., Simoen, E., Claeys, C.

Journal:

IEEE Transactions on Semiconductor Manufacturing

Année:

2010

Langue:

english

Fichier:

PDF, 927 KB

english, 2010

49

Photoluminescent ZnS:Cu phosphor films made with atomic-layer chemical vapor deposition and thermal evaporation

A. Hikavyy, K. Neyts, G. Stuyven, D. Poelman, P. De Visschere

Journal:

Journal of the Society for Information Display

Année:

2002

Langue:

english

Fichier:

PDF, 268 KB

english, 2002

50

[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - Superior NBTI reliability of SiGe channel pMOSFETs: Replacement gate, FinFETs, and impact of Body Bias

Franco, J., Kaczer, B., Eneman, G., Roussel, Ph.J., Grasser, T., Mitard, J., Ragnarsson, L.-A., Cho, M., Witters, L., Chiarella, T., Togo, M., Wang, W.-E, Hikavyy, A., Loo, R., Horiguchi, N., Groesene

Année:

2011

Langue:

english

Fichier:

PDF, 593 KB

english, 2011